? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bas16 switching switching switching switching diode diode diode diode _PO (ba (ba (ba (ba s16 s16 s16 s16 ) ) ) ) features c device device device device marking marking marking marking electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a = = = = 25 25 25 25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted o ? ?? 25 ) ) ) ) sot-23 ?? 1 characteristic ? symbol ? max ? unit power dissipation ? p d (ta=25 ) 225 mw forward current i f 200 ma reverse voltage ? v r 75 v junction and storage temperature Y???? t j , t stg - 5 5to+150 bas16=a6 bas16=a6 bas16=a6 bas16=a6 characteristic ? symbol ? min ? max ? unit reverse breakdown voltage ? (i r =100ua) v (br) 75 v reverse leakage current ? (v r =75v) i r 1 ua forward voltage(test condition) ? i f =1ma i f =10ma i f =50ma i f =150ma v f 715 855 1000 1250 mv diode capacitance Ow (v r =0v, f=1mhz) c d 2 pf reverse recovery time ??rg t rr 6 ns
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bas16 dimension dimension dimension dimension b?
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